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PA-300A03-509A Sinter Copper Electrode

Copper electrode sheet for chip top-side interconnection, compatible with ultrasonic bonding of 300–400 μm copper wire and suitable for SiC and IGBT module packaging.

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⚡ Sourcing insights

Commercial suitability

Copper wire bonding compatibility and ≥250 W/m·K thermal conductivity are specified.

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Compatible with ultrasonic bonding of 300–400 μm copper wire

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Specified thermal conductivity of at least 250 W/m·K

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Lead-free, halogen-free, and flux-free

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Designed for SiC and IGBT module packaging

Pro tip: For sintered copper interconnect materials, confirm the required sintering atmosphere, temperature, pressure, and interface compatibility for your assembly process.

Specifications

Thermal Conductivity ≥250 W/m·K
Volumetric Resistivity ≤6 μΩ·cm
Mounting Technology Without adhesive dots
Applicable Interface Au, Ag, Pd
Sintering Atmosphere Vacuum, N₂
Sintering Temperature 250 °C
Sintering Pressure 20 MPa
Sintering Time 5 min
Shearing Strength ≥50 MPa
Semiconductor Materials Non-Ferrous Metals

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xinyuanmat.cn

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🇨🇳 Shenzhen, Guangdong, China

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